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Semiconductor
THN450Z
SiGe NPN Transistor
SOT-343
Unit in mm
Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
Features
- High gain bandwidth product fT = 16 GHz @ VCE = 2 V, IC = 50 mA fT = 18 GHz @ VCE = 3 V, IC = 70 mA - High power gain |S21|2 = 12 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz MAG = 14 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz - Low noise figure NF = 1.5 dB @ VCE = 2 V, IC = 7 mA, f = 1.8 GHz
1
3
2
4
Pin Configuration
1. Base 2. Emitter 3. Emitter 4. Collector
Absolute Maximum Ratings ( TA = 25 )
Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 10 4.5 1.5 100 450 150 -65 ~ 150 Unit V V V mA mW
Caution : Electro Static Discharge sensitive device
1
THN450Z
Electrical Characteristics ( TA = 25 )
Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 7 V, IE = 0 mA VCE = 2 V, IB = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 5 mA VCE = 2 V, IC = 50 mA VCE = 3 V, IC = 70 mA Maximum Available Gain MAG VCE = 2 V, IC = 50 mA, f = 0.9 GHz VCE = 2 V, IC = 50 mA, f = 1.8 GHz Insertion Power Gain |S21|2 VCE = 2 V, IC = 50 mA, f = 0.9 GHz VCE = 2 V, IC = 50 mA, f = 1.8 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 2 V, IC = 7 mA, f = 1.8 GHz VCB = 2 V, IE = 0 mA, f = 1 MHz Min. 50 14 16 20 12 16 10 Typ. 16 18 22 14 18 12 1.5 0.35 Max. 1.0 1.0 0.5 260 2.0 GHz GHz dB dB dB dB dB pF Unit
hFE Classification
Marking hFE Value BG1 50 - 150 BG2 130 - 260
2
THN450Z
Typical Characteristics ( TA = 25 , unless otherwise specified )
Total Power Dissipation vs. Ambient Temperature
Reverse Transfer Capacitance, Cre (pF)
600
0.8 f = 1 MHz 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4
Reverse Transfer Capacitance vs. Collector to Base Voltage
Total Power Dissipation, Ptot (mW)
500 400 300 200 100 0 0 25 50 75 100 125
o
150
Ambient Temperature, TA ( C)
Collector to Base Voltage, VCB (V)
DC Current Gain vs. Collector Current
400 VCE = 3 V
50 45
Collector Current vs. Base to Emitter Voltage
VCE = 3 V
Collector Current, IC (mA)
1 10 100
40 35 30 25 20 15 10 5
DC Current Gain, hFE
100
50
10 0.1
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, IC (mA)
Base to Emitter Voltage, VBE (V)
3
THN450Z
Collector Current vs. Collector to Emitter Voltage
90 80
24
Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product, fT (GHz)
22 20 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 VCE = 2 V VCE = 3 V
Collector Current, IC (mA)
70 60 50 40 30 20 10 0 0 1 2
IIBB = 800 uA = 800 IIB = 600 uA = 600 B
IB 400 IB = 400 uA
IIB = 200 uA = 200 B
3
4
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
Maximum Available Gain vs. Collector Current
30
Insertion Power Gain vs. Collector Current
25
Maximum Available Gain, MAG (dB)
Insertion Power Gain, |S21| (dB)
25 f = 0.9 GHz 20
2
VCE = 3 V VCE = 2 V VCE = 3 V
20
f = 0.9 GHz
VCE = 3 V VCE = 2 V
15
VCE = 3 V VCE = 2 V f = 1.8 GHz
15 f = 1.8 GHz 10 5 0 1 10 100 VCE = 2 V
10
5
0 1 10 100
Collector Current, IC (mA)
Collector Current, IC (mA)
4
THN450Z
Power Gain vs. Frequency
40 35 30 VCE = 2 V IC = 50 mA MSG
40 35 30 VCE = 3 V IC = 70 mA MSG
Gain (dB)
20 15 10 5 0 0.0 |S21|
2
Gain (dB)
25
25 20 15 10 5 0 0.0
MAG
MAG
|S21|
2
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Collector Current
at VCE = 2 V, IC =parameters, ZS = ZSopt
4.0 3.5
Noise Figure, NF (dB)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 50 60 70 f = 1.8 GHz f = 0.9 GHz
Collector Current, IC (mA)
5

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